Contention-Free High-Speed Clock-Gate Based On Set/Reset Latch For Wide Voltage Scaling

2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)(2018)

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摘要
The paper proposes a novel practical replacement of conventional high-speed clock-gates for wide voltage scaling. The proposed clock-gate enhances the energy-delay-product by 43% and improves the low-voltage operation by 50 mV reducing the sampling window by 31% as compared with a conventional high-speed pulse-base clock-gate. The comparison also indicates 50% speed improvement resulting in up to 60% EDP reduction as compared with conventional low-power clock-gates. A test chip was fabricated using a 14 nm CMOS FinFET process with five representative process corners, SS, TT, FF, SF and FS, and measured under three temperature conditions, -25 degrees C, 25 degrees C and 100 degrees C, for production-level silicon verification.
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关键词
CMOS FinFET process,set/reset latch,production-level silicon verification,low-power clock-gates,high-speed pulse-base clock-gate,low-voltage operation,energy-delay-product,high-speed clock-gates,wide voltage scaling,contention-free high-speed clock-gate,voltage 50.0 mV,size 14.0 nm,temperature -25.0 degC,temperature 25.0 degC,temperature 100.0 degC
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