High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows

Naoharu Shimomura,Hiroaki Yoda,Tomoaki Inokuchi,Katsuhiko Koi,Hideyuki Sugiyama,Yushi Kato,Yuichi Ohsawa, Altansargai Buyandalai,Satoshi Shirotori,Soichi Oikawa,Mariko Shimizu,Mizue Ishikawa,Tiwari Ajay,Atsushi Kurobe

2018 IEEE Symposium on VLSI Circuits（2018）

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摘要

Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write window and a read window of high-speed VoCSM from experimental data. The design windows of both writing and reading are large enough for gigabit memory.

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关键词

gigabit memory,magnetic memory,read window,high-speed VoCSM,voltage controlled magnetic anisotropy,high-speed voltage control spintronics memory,broad design windows,spin Hall effect,MRAM,write window

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