TriZone: A Design of MLC STT-RAM Cache for Combined Performance, Energy, and Reliability Optimizations.

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems(2018)

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摘要
Spin-transfer torque random access memory (STT-RAM) is a promising technology for future nonvolatile caches and memories. To increase the storage density, multilevel cell (MLC) technique was recently introduced to STT-RAM designs at the cost of degraded access speed, reliability, and energy efficiency. Existing MLC STT-RAM cache architectures primarily focus on the performance and energy optimizat...
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关键词
Random access memory,Resistance,Magnetic tunneling,Reliability engineering,Computer architecture,Microprocessors
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