The band gap energy of the dilute nitride alloy GaN x As y P 1− x − y (0 ≤ x ≤ 0.07, 0 ≤ y ≤ 1) depending on content

The dilute nitride alloy GaN x As y P 1− x − y is a very attractive material for solar cells. In this work, the band gap evolution for the dilute nitride alloy GaN x As y P 1− x − y is investigated. It is found that the band gap energy of the dilute nitride alloy GaN x As y P 1− x − y can be predicted by the modified band anticrossing model. It is also found that the interaction of the nitrogen level with the conduction band minimum of the host material is much stronger than the intraband coupling interaction in the conduction band minimum and the valence band maximum. In addition, it is found that the weak composition dependence of the N level is due to the N clusters. The dilute nitride alloy GaN x As y P 1− x − y should have a direct band gap no matter how large the As content is.