Capping IGZO transistor with MAPbI3 perovskite light absorber

2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)(2017)

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摘要
Perovskite capped IGZO thin film transistor (TFT) is theoretically a promising new device for advanced photodetection and image sensing. This hybrid approach in principle combines the merits of the low turn-off dark current of the IGZO TFT and the high absorption coefficient of perovskite light absorber. However, during fabrication, solution-processed perovskite layer usually deteriorate the performance of the IGZO TFTs. In order to achieve compatible fabrication conditions, perovskite thin films are deposited on the IGZO TFTs by one-step and two-step spin-coating methods, and their effects on the TFT transfer characteristics are investigated. Furthermore, patterned PbI 2 are evaporated on IGZO TFT via shadow masks, and its feasibility of fabricating perovskite sensing pixels on IGZO TFT arrays are discussed.
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关键词
advanced photodetection,image sensing,two-step spin-coating methods,TFT transfer characteristics,perovskite sensing pixels,IGZO TFT arrays,absorption coefficient,MAPbI3 perovskite light absorber,perovskite capped IGZO thin film transistor,turn-off dark current,perovskite light absorber,solution-processed perovskite laye,shadow masks,InGaZnO
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