VAET-STT: Variation Aware STT-MRAM Analysis and Design Space Exploration Tool.

Spin transfer torque magnetic random access memory is a promising candidate to replace CMOS based on-chip memories due to its advantages, such as nonvolatility, high density, and scalability. However, its stochastic switching and higher sensitivity to process variation compared to CMOS memories can significantly affect its performance, energy, and reliability. Although a few works exist which anal...