High-Density Shift-Register-Based Rapid Single-Flux-Quantum Memory System For Bit-Serial Microprocessors

We demonstrated a high-density shift-register-based random access memory system based on rapid single-flux-quantum (RSFQ) logic. This memory system was developed to be integrated with bit-serial RSFQ microprocessors, which are called the CORE e series. It is composed of a shift-register array to store data, a decoder to select the shift register pointed to by a given address, and mergers to output data. To achieve high density, we introduced a new memory system structure and designed compact storage elements and other peripheral components. We integrated two 256-bit memory systems (32 entries for 8-bit data and instructions each) with a CORE e microprocessor and fabricated it using the National Institute of Advanced Industrial Science and Technology 10-kA/cm(2) Advanced Process. The area occupied by each memory system is 2.69 mm(2). We obtained correct operations for all of the addresses in low-frequency tests. The typical measured bias margin was 86%-106%.