6.9-Cm2active-area Interconnected Wafer 4-Kv P-I-n Diode Pulsed at 55 Ka
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2015）
关键词
4H-SiC,PiN diode,action,pulsed power,wafer interconnection,full wafer diode,high voltage,di/dt
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要