Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems（2018）
摘要
In this paper, a compact SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) is developed with considering effects when scaling the transistor size down to the 10-nm technology node. The model supports different transistor design parameters such as width, length, oxide thickness, and various channel materials, as well as the applied strain, which enables the ...
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关键词
Integrated circuit modeling,Transistors,Numerical models,Computational modeling,Graphene,Photonic band gap,SPICE
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