A Dual-Data Line Read Scheme for High-Speed Low-Energy Resistive Nonvolatile Memories.

Resistance-based memory devices are considered as a strong candidate for next-generation nonvolatile memories as well as potential application in high density embedded cache. These devices can be programmed to different resistance states by applying electrical bias. Read operation then senses the programmed state by discharging a shared data line through the memory cell. However, as the dimensions...