Dynamic Characteristics And Related Trapping Effects Of Gan-Based Fin-Mishemts

In this paper, AlGaN/GaN fin-shaped metal-insulator-semiconductor high-electron-mobility transistors (Fin-MISHEMTs) with a gate length of 80nm and fin width of 100 nm were fabricated and investigated. Based on the pulsed I-V measurements, the dynamic characteristics of GaN-based Fin-MISHEMTs were carried out for analyzing the trapping effects and the physical mechanism is also explained. The result indicates that the electrons are mostly captured by the traps below the gate other than that in the drain access region for the samples, and Fin-MISHEMT structure can suppress the trap-induced current collapse effectively due to its strong gate controllability. Compared with the planar MISHEMT, Fin-MISHEMT is a promising device structure for suppressing the short channel effects (SCEs) as well as the current collapse for GaN-based devices.