Development and characterization of TaN thin film resistor with CMOS compatible fabrication process

Polysilicon is the commonly used material for resistor device in standard CMOS technology. Due to the process limitation, polysilicon resistor has the problem of high resistance variation and high temperature coefficient of resistance (TCR), which may cause performance degradation in analog circuit design. In this work, high resistivity TaN metal film was developed and integrated in thin TaN metal resistor structure, which was fabricated on 200mm wafer CMOS Cu-BEOL. The metal resistor performance was evaluated to check its potential value in CMOS resistor device application.