Characterization and Evaluation of the State-of-the-Art 3.3-kV 400-A SiC MOSFETs.

IEEE Transactions on Industrial Electronics(2017)

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摘要
Since their introduction, the SiC-based semiconductors have been of special interest to the field of power electronics, enabling increase in system efficiency, maximum operating temperature, and power density. In higher voltage range, these semiconductors are at early stage of development and yet are not commercialized. This paper investigates state-of-the-art noncommercialized 3.3-kV 400-A full-S...
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关键词
Logic gates,Silicon carbide,MOSFET,Silicon,Insulated gate bipolar transistors,Switches,Medium voltage
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