More-Than-Moore: 3d Heterogeneous Integration Into Cmos Technologies

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS)(2017)

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摘要
Monotonic scaling-down of CMOS integrated circuit (IC) technologies is rapidly approaching to its physical end, yet advances in ICs will continue. Instead of one-dimensional (1D) scaling dawn, one apparent solution is lateral integration of heterogeneous devices in 3-dimensional (3D) fashion, which opens great opportunities to make more complex Si-based microsystems for unlimited applications well beyond ICs, such as, internet of things (IoT). This paper discusses 3D heterogeneous integration of a few non-traditional devices into traditional Si CMOS technologies.
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关键词
Graphene, NEMS, ESD, inductor, magnetic core, heterogeneous, 3D, integration
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