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Experimental Characterization of the Static Noise Margins of Strained Silicon Complementary Tunnel-Fet SRAM

G. V. Luong,S. Strangio,A. T. Tiedemann,P. Bernardy,S. Trellenkamp,P. Palestri,S. Mantl,Q. T. Zhao

2017 47th European Solid-State Device Research Conference (ESSDERC)（2017）

Cited 9|Views39
Key words
nanowire,Silicon,SRAM,tunneling FET
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