4 W high performance 1470 nm InGaAsAs lasers

We report on our design and fabrication of 1470 nm high power InGaAlAs quantum well lasers. It is found that the 2-mm-long-cavity devices with aperture size of 96 mu m can reach maximum power of around 4.2 W. The threshold is around 500 mA, and slope efficiency is about 0.42 W/A. Apart from the excellent external quantum efficiency and thermal performance, devices also show reduced beam divergence which is about 30 degrees. Accelerated life-time test has also been performed to determine the reliability performance. Thus far more than 9000 life-test-hour has been accumulated, and there is no detectable sign of the power degradation, indicating our devices are extremely reliable.