A 0.65-V, 500-MHz Integrated Dynamic and Static RAM for Error Tolerant Applications.

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2017)

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摘要
The diminishing returns provided by voltage scaling have led to a recent paradigm shift toward so-called “approximate computing,” where computation accuracy is traded off for cost in error-tolerant applications. In this paper, a novel approach to achieving the power-performance-area versus data integrity tradeoff is proposed by integrating robust static memory cells and error-prone dynamic cells w...
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关键词
Random access memory,Memory management,Arrays,Robustness,Topology,Power demand
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