Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS
2017 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)(2017)
摘要
In this paper, we illustrate by simulation and extend our previous work by demonstration of fabricated devices of electrostatically doped, reconfigurable planar field-effect-transistors with dual work function metal gates. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable in operation by applying a control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.
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关键词
ambipolar,voltage-programmable,reconfigurable,RFET,electrostatic doping,SOI
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