13.1 A Fully Integrated Multimode Front-End Module for GSM/EDGE/TD-SCDMA/TD-LTE Applications Using a Class-F CMOS Power Amplifier.
IEEE Conference Proceedings（2017）
Key words
GSM-EDGE-TD-SCDMA-TD-LTE applications,RF front-end complexity,class-F CMOS power amplifier,4G multimode multiband cellular radios,filters,switches,RF footprint reduction,fully integrated multimode TDD transmit front-end module,TXM,2-layer laminate LGA module,multimode multiband power amplifier paths,1P6M CMOS process,power combiners,harmonic filters,3M2V IPD die,SP10T antenna,1P3M SOI process,PA transistors,solder mask,ground vias,thermal conductivity,size 0.153 mum,size 0.18 mum,Si
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