CMOS-Compatible Ternary Device Platform for Physical Synthesis of Multi-valued Logic Circuits

2017 IEEE 47th International Symposium on Multiple-Valued Logic (ISMVL)(2017)

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摘要
We propose the feasible and scalable ternary CMOS (T-CMOS) device platform for a fully CMOS-compatible physical synthesis of multi-valued logic (MVL) circuits. By developing the compact model of T-CMOS and verifying the physical model parameters with experimental data, the T-CMOS design framework based on standard ternary inverter (STI) is presented for static noise margin (SNM) enhancement and performance analysis of ternary logic gates.
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关键词
teranry CMOS (T-CMOS),Multi-valued logic (MVL),compact model,standard ternary inverter (STI),static noise margin (SNM)
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