W-Band Inp Transmission Line Metamaterial

In this work, we report on a W-band transmission line based metamaterial using an InP heterojunction bipolar transistor (HBT) device fabrication process. The design uses complementary split ring resonators (cSRR) for operation around 95 GHz. Two structures, single and triple unit cells, were designed and fabricated. Measured data shows good agreement with simulations and exhibits negative effective epsilon (ENG) around 95 GHz. The triple cell metamaterial structure shows a wider resonance bandwidth and a larger phase change than single cell, as expected. These are first reported transmission line based metamaterials operating at the W-band using the InP high speed device fabrication process.