Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit
Microelectronics Reliability, Volume 73, 2017, Pages 146-152.
Abstract In this paper, we present extensive random telegraph signal (RTS) noise characterization in SiGe heterojunction bipolar transistors. RTS noise, observed at the base, originates at the emitter periphery while at the collector side distinct RTS noise is observed at high-injection that originates from the traps in the shallow tren...More
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