Cross-Layer Optimization for Multilevel Cell STT-RAM Caches.

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2017)

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摘要
Spin-transfer torque random access memory (STT-RAM), as an emerging nonvolatile memory technology, provides very dense array structure and extremely low leakage power consumption. It demonstrates a great potential in replacing conventional static random access memory technology to develop the next-generation on-chip cache memory of microprocessors and graphics processing units. The multilevel cell...
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关键词
Switches,Computer architecture,Microprocessors,Transistors,Random access memory,Magnetic tunneling
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