Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon.
Proceedings of the IEEE(2017)
摘要
This paper reviews the technology requirements of future 100-300-GHz millimeter-wave (mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as well as for 100-300-GBaud fiber-optic communication systems. Measurements of state-of-the-art silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), SiGe heterojunction bipolar transistors (HBTs), and of a variet...
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关键词
Silicon germanium,Logic gates,MOSFET,Heterojunction bipolar transistors,Optical fiber devices,Terahertz materials,Electronics,Radio frequency,Silicon-on-insulator,Millimeter wave devices
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