SiGe HBT Technology: Future Trends and TCAD-Based Roadmap.
Proceedings of the IEEE(2017)
摘要
A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known parasitic effects, enables the accurate determination of the fig...
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关键词
Heterojunction bipolar transistors,Silicon germanium,Integrated circuit modeling,BiCMOS integrated circuits,Performance evaluation,CMOS integrated circuits,Market research,Radio frequency,Terahertz materials,Electronics,CAD CAM
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