SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

    Michael Schröter
    Michael Schröter
    Tommy Rosenbaum
    Tommy Rosenbaum
    Ed Preisler
    Ed Preisler
    Anindya Mukherjee
    Anindya Mukherjee

    Proceedings of the IEEE, pp. 1068-1086, 2017.

    Cited by: 93|Bibtex|Views21|Links
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    Keywords:
    Heterojunction bipolar transistorsSilicon germaniumIntegrated circuit modelingBiCMOS integrated circuitsPerformance evaluationMore(6+)

    Abstract:

    A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known para...More

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