Impact of FinFET on Near-Threshold Voltage Scalability.

Nathaniel Ross Pinckney,Supreet Jeloka,Ronald G. Dreslinski,Trevor N. Mudge,Dennis Sylvester,David Blaauw,Lucian Shifren,Brian Cline,Saurabh Sinha

IEEE Design & Test（2017）

引用 13|浏览194

暂无评分

摘要

Near-threshold operations provide a powerful knob for improving energy efficiency and alleviating on-chip power densities. This article explores the impact of newest FinFET CMOS technologies (from 40 to 7 nm) on near-threshold computing in terms of performance and energy efficiency.

查看译文

关键词

FinFETs,Integrated circuit modeling,Parallel processing,Delays,Threshold voltage,Performance evaluation,Energy efficiency,Silicon,Density measurement,Voltage control

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要