Determination of the energy band gap of Bi 2 Se 3
SCIENTIFIC REPORTS(2017)
摘要
Despite intensive investigations of Bi 2 Se 3 in past few years, the size and nature of the bulk energy band gap of this well-known 3D topological insulator still remain unclear. Here we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi 2 Se 3 , which unambiguously shows that the energy band gap of this material is direct and reaches E g = (220 ± 5) meV at low temperatures.
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关键词
Semiconductors,Topological matter,Science,Humanities and Social Sciences,multidisciplinary
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