Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS.

IEEE Journal of Solid-State Circuits(2017)

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摘要
Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-generation memory. However, maintaining a target sensing margin is a challenge with technology scaling because of the increased process variation and decreased read cell current. This paper proposes an offset-canceling current-sampling sense amplifier (OCCS-SA) that is intended for use in deep submicrometer resisti...
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关键词
Sensors,Random access memory,Nonvolatile memory,Stability analysis,Circuit stability,Transistors,Voltage measurement
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