Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory.

Xiaoyong Xue,Yarong Fu,Yanqing Zhao,Juan Xu,Jianguo Yang,Yufeng Xie,Yinyin Lin,Ryan Huang,Qingtian Zou,Jingang Wu

IEEE Transactions on Circuits and Systems II: Express Briefs（2017）

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摘要

Magnetoresistive random access memory (MRAM) suffers from low magnetoresistance ratio and serious variations in both low-resistance state (RP) and high-resistance state (RAP). The resulting narrow resistance window between RP and RAP makes it difficult to acquire a sufficient sense margin for accurate read operation. In this brief, a novel read circuit for MRAM is proposed with dynamic data-depend...

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关键词

Transistors,IP networks,Latches,Random access memory,Magnetoresistance,Resistance

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