Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations
IEEE Journal of the Electron Devices Society（2017）
摘要
This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when studying short-channel effects in III-V FETs, one has to account for quantum-confinement, or else predictions wil...
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关键词
Indium gallium arsenide,Numerical models,Numerical simulation,Silicon,Logic gates,Solid modeling,MOSFET circuits
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