A Study of Vertical Thin Poly-Si Channel Transfer Gate Structured CMOS Image Sensors

Sung-Kun Park, Yun-Hui Yang, Cha-Young Lee,Young-Jun Kwon, Tae-Sun Shin, Jae Hyeon Park,Chris Hong,In-Wook Cho,Kyung-Dong Yoo

IEEE Electron Device Letters(2017)

引用 7|浏览1
暂无评分
摘要
In this letter, the image characteristics of CMOS image sensor (CIS) pixels using a vertical thin poly-Si channel (VTPC) transfer gate (TG) are established for the first time. The study of three-dimensional (3D) structures in the image sensor field has been started by 3D Flash memories. By adopting the poly-Si channel fabrication concept of 3D NAND flash memories-appropriately modified to fit the ...
更多
查看译文
关键词
Three-dimensional displays,Logic gates,Flash memories,CMOS image sensors,Fabrication,Grain boundaries
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要