A Study of Vertical Thin Poly-Si Channel Transfer Gate Structured CMOS Image Sensors
IEEE Electron Device Letters(2017)
摘要
In this letter, the image characteristics of CMOS image sensor (CIS) pixels using a vertical thin poly-Si channel (VTPC) transfer gate (TG) are established for the first time. The study of three-dimensional (3D) structures in the image sensor field has been started by 3D Flash memories. By adopting the poly-Si channel fabrication concept of 3D NAND flash memories-appropriately modified to fit the ...
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关键词
Three-dimensional displays,Logic gates,Flash memories,CMOS image sensors,Fabrication,Grain boundaries
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