A Fast Process-Variation-Aware Mask Optimization Algorithm With a Novel Intensity Modeling

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2017)

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摘要
With the continuous shrinkage of advanced technology nodes into the sub-16-nm regime, optical proximity correction (OPC) is still the main stream to preserve acceptable wafer image quality under lithographic process variations in the foreseeable future. However, OPC is getting more aggressive to keep pace with advanced technology nodes. This results in complex mask solutions and long computation t...
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关键词
Image quality,Semiconductor device modeling,Adaptive optics,Optical imaging,Kernel,Manufacturing,Estimation
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