Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells

IEEE Journal of Photovoltaics(2017)

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摘要
In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs) by means of quantum efficiency (QE) measurements. We are able, for the first time, to measure an absolute QE which clearly reveals the three characteristic bandgaps of an IBSC; EG, EH, and EL, for which we found the values 1.52, 1.02, and 0.49 eV, respectively, at 9 K. Under monochromatic illumination, QE at...
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关键词
Temperature measurement,Photovoltaic cells,Quantum dots,Absorption,Energy measurement,Silicon carbide,Gallium arsenide
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