Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

    Proceedings of the IEEE, Volume PP, Issue 99, 2017, Pages 1-16.

    Cited by: 53|Bibtex|Views4|Links
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    Author Keywords thermal effectsHeterojunction bipolar transistors (HBTs)highfrequency measurementsGaAsSbmillimeter waveMore(5+)

    Abstract:

    This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.

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