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Electrical Instability of InGaZnO Thin-Film Transistors with and Without Titanium Sub-Oxide Layer under Light Illumination

Y. C. Chiu,Z. W. Zheng, C. H. Cheng,P. C. Chen, S. S. Yen,C. C. Fan,H. H. Hsu,H. L. Kao,C. Y. Chang

Applied Physics A（2017）

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关键词
HfO2,Passivation Layer,Light Illumination,High Energy Photon,Illumination Environment
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