An Optically Readable InGaN/GaN RRAM

Zheng, K.,Zhao, J. L.,Zhang, Z. H.,Ji, Y.,Zhu, B. B.,Tan, S. T.,Demir, H. V.,Teo, K. L.,Sun, X. W.

IEEE Transactions on Electron Devices（2016）

引用 0|浏览21

暂无评分

摘要

The unidirectional bipolar resistance switching in GaN/InGaN-based light-emitting diode (LED) was discovered to explore optically readable resistive random access memory (RRAM) device. The device displays stable resistance window in both endurance and retention tests, showing good nonvolatility for memory application. The light-emitting state of this device can also be tuned by the resistance swit...

查看译文

关键词

Light emitting diodes,Resistance,Optical switches,Tunneling,Optical devices,Capacitance

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要