Process development of through-glass-via (TGV) interposer for radio frequency (RF) applications

In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361μm in the diameter at the front side, 85μm in the diameter on the back side, and 338μm in the thickness. Effects of manufacture error due to sand blasting drilling on the electrical property of TGV at high frequency (1-40GHz) is investigated with simulation results.