Incremental Bitline Voltage Sensing Scheme With Half-Adaptive Threshold Reference Scheme in MLC PRAM

Research on phase-change random access memory (PRAM) for multilevel cells (MLCs) has been actively conducted owing to the advantages of PRAM cells, such as large resistance margin and fast read/write access time. However, the resistance drift (R-drift), which increases the resistance of the PRAM cells with time, should be overcome to achieve MLC PRAM operation. In this paper, we introduce sensing ...