np-ECC: Nonadjacent position error correction code for racetrack memory

2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)(2016)

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摘要
Racetrack memory is a promising non-volatile memory because of its ultra-high storage density. The data are stored along the tape-like cell, where a “shift” operation is used to move the data in a cell back and forth to be accessed. Shift operations suffer from “position error”, where the shift distance is incorrect. Previous work solved the error by position error correction code (p-ECC). However, a bit error within the p-ECC bits will fail the correction mechanism. To protect p-ECC bits from bit errors, we propose a new mapping method for p-ECC, called nonadjacent position error correction code (np-ECC) in this paper. Evaluation shows significant reduction on correction mechanism failure rate.
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关键词
Racetrack memory,Error Correction Code,Position Error
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