Design Space Exploration Of Finfets With Double Fin Heights For Standard Cell Library

2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)(2016)

引用 3|浏览20
暂无评分
摘要
This paper proposes a method to explore the design space of FinFETs with double fin heights. Our study shows that if one fin height is sufficiently larger than the other and the greatest common divisor of their equivalent transistor widths is small, the fin height pair will incur less width quantization effect and lead to better area efficiency. We design a standard cell library based on this technology using a tailored FreePDK15. With respect to a standard cell library designed with FreePDK15, about 86% of the cells designed with FinFETs of double fin heights have a smaller delay and 54% of the cells take a smaller area. We also demonstrate the advantages of FinFETs with double fin heights through chip designs using our cell library.
更多
查看译文
关键词
FinFET,standard cell library,double fin heights,layout,parasitics
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要