RRAM based learning acceleration.

CASES(2016)

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摘要
Deep Learning (DL) is becoming popular in a wide range of domains. Many emerging applications, ranging from image and speech recognition to natural language processing and information retrieval, rely heavily on deep learning techniques, especially the Neural Networks (NNs). NNs have led to great advances in recognition accuracy compared with other traditional methods in recent years. NN-based methods demand much more computation and memory resource, and therefore a number of NN accelerators have been proposed on CMOS-based platforms, such as FPGA and GPU [1]. However, it becomes more and more difficult to obtain substantial power efficiency and gains directly through the scaling down of traditional CMOS technique. Meanwhile, the large data amount in DL applications also meets an ever-increasing \"memory wall\" challenge because of the efficiency of von Neumann architecture. Consequently, there is a growing research interest of exploring emerging nano-devices and new computing architectures to further improve power efficiency [2].
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关键词
RRAM based learning acceleration,deep learning techniques,neural networks,NN-based methods,NN accelerators,CMOS-based platforms,power efficiency,CMOS technique,DL applications,memory wall,von Neumann architecture,nanodevices,metal-oxide resistive random-access memory device,metal-oxide resistive RRAM device,RRAM crossbar structure,analog matrix-vector multiplication,high-cost data transportation
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