Analysis of Defects and Variations in Embedded Spin Transfer Torque (STT) MRAM Arrays.

Ashwin Chintaluri,Helia Naeimi,Suriyaprakash Natarajan,Arijit Raychowdhury

IEEE Journal on Emerging and Selected Topics in Circuits and Systems（2016）

引用 64|浏览18

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摘要

Spin transfer torque magnetic random access memory (STT-MRAM) is a competitive, future memory technology for last-level embedded caches. It exhibits ultra-high density (3-4X of SRAM), non-volatility, nano-second Read and Write speeds, and process and voltage compatibility with CMOS. As the design and fabrication process mature for the STT-MRAM, there is a need to study the various fault models tha...

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关键词

Magnetic tunneling,Circuit faults,Torque,Magnetic anisotropy,Resistance,Random access memory,Transistors

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