Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias.

Toshiaki Kirihata,John Golz,Matthew R. Wordeman,Pooja Batra,Gary W. Maier,Norman Robson,Troy L. Graves-abe,Daniel Berger,Subramanian S. Iyer

IEEE Journal on Emerging and Selected Topics in Circuits and Systems（2016）

引用 17|浏览104

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摘要

This paper describes orthogonal scaling of dynamic-random-access-memories (DRAMs) using through-silicon-vias (TSVs). We review 3D DRAMs including DDR3, wide I/O mobile DRAM (WIDE I/O), and more recently, the hybrid-memory cube (HMC) and high-bandwidth memory (HBM) targeted for high-performance computing systems. We then cover embedded 3D DRAM for high-performance cache memories, reviewing an early...

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关键词

Three-dimensional displays,Random access memory,Wiring,Stacking,Cache memory,Through-silicon vias,Silicon

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