High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM.

Yeongkyo Seo,Kon-Woo Kwon,Xuanyao Fong,Kaushik Roy

IEEE Journal on Emerging and Selected Topics in Circuits and Systems（2016）

引用 42|浏览16

暂无评分

摘要

This paper proposes a dual (1R/1W) port spin-orbit torque magnetic random access memory (1R/1W SOT-MRAM) for energy efficient on-chip cache applications. Our proposed dual port memory can alleviate the impact of write latency on system performance by supporting simultaneous read and write accesses. The spin-orbit device leverages the high spin current injection efficiency of spin Hall metal to ach...

查看译文

关键词

Transistors,Magnetic tunneling,Standards,System-on-chip,Torque,Random access memory,Integrated circuit reliability

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要