55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters.

James Hoffman,Stefan Shopov,Pascal Chevalier,Andreia Cathelin,Peter Schvan,Sorin P. Voinigescu

IEEE Journal of Solid-State Circuits（2016）

引用 35|浏览16

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摘要

Two distributed circuits based on MOS-HBT cascodes are reported in a 55-nm SiGe BiCMOS technology and are aimed at a single-chip time-interleaved transceiver for future 1-Tb/s optical links. The first, a DC-135-GHz single-ended distributed amplifier (DA) was optimized for low noise, linear receivers, and has a measured noise figure (NF) <;7 dB up to 88.5 GHz, 800 mVpp of linear input range, and 8....

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关键词

Bandwidth,Silicon germanium,BiCMOS integrated circuits,Linearity,Heterojunction bipolar transistors,Receivers,MOSFET

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