HL-PCM: MLC PCM Main Memory with Accelerated Read.

2016 IEEE INTERNATIONAL SYMPOSIUM ON PERFORMANCE ANALYSIS OF SYSTEMS AND SOFTWARE ISPASS 2016(2017)

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摘要
Multi-Level Cell Phase Change Memory (MLC PCM) is a promising candidate technology for DRAM replacement in main memory of modern computers. Despite of its high density and low power advantages, this technology seriously suffers from slow read and write operations. While prior works extensively studied the problem of slow write, this paper targets high read latency problem in MLC PCM and introduces...
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关键词
Phase change materials,Resistance,Random access memory,Prefetching,Memory management,Microprocessors
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