Recent advances in 3D VLSI integration

Claire Fenouillet-Béranger,Perrine Batude,L. Brunet,Vincent Mazzocchi, C.-M. V. Lu,Fabien Deprat,J. Micout,M.-P. Samson,Bernard Previtali,P. Besombes,N. Rambal,François Andrieu,Olivier Billoint,M. Brocard,Sebastien Thuries,Gerald Cibrario,Maud Vinet

2016 International Conference on IC Design and Technology (ICICDT)（2016）

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摘要

This work highlights recent advances in 3D VLSI integration. A review of low temperature process modules development such as junctions, spacers and salicidation is presented. Finally, for the first time, a full CMOS over CMOS 3D VLSI integration on 300mm wafers is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain.

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关键词

3D VLSI integration,Low temperature process,Laser anneal,Junctions,Low-k spacers,NiCo silicide

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