Near-threshold computing in FinFET technologies: Opportunities for improved voltage scalability

2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)(2016)

引用 23|浏览83
暂无评分
摘要
In recent years, operating at near-threshold supply voltages has been proposed to improve energy efficiency in circuits, yet decreased efficacy of dynamic voltage scaling has been observed in recent planar technologies. However, foundries have introduced a shift from planar to FinFET fabrication processes. In this paper, we study 7nm FinFET's ability to voltage scale and compare it to planar technologies across three dynamic voltage scaling scenarios. The switch to FinFET allows for a return to strong voltage scalability. We find up to 8.6 x higher energy efficiency at NT compared to nominal supply voltage (vs. 4.8 x gain in 20nm planar).
更多
查看译文
关键词
near-threshold supply voltages,energy efficiency,dynamic voltage scaling,FinFET fabrication processes,planar technologies,size 7 nm,size 20 nm
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要