Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies.

Akhilesh Jaiswal,Xuanyao Fong,Kaushik Roy

IEEE Journal on Emerging and Selected Topics in Circuits and Systems（2016）

引用 56|浏览7

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摘要

Spin transfer torque based magnetic memories (STT-MRAMs) are leading contender for the replacement of SRAM caches. However, STT-MRAMs suffer from high write current, read/write stability conflicts and other failure mechanisms. In this paper, we present a comprehensive scaling analysis for STT-MRAMs based on in-plane and perpendicular anisotropy magnets in context to different failure mechanisms. W...

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关键词

Magnetic tunneling,Mathematical model,Anisotropic magnetoresistance,Magnetization,Critical current density (superconductivity),Switches,Market research

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